Noushin Nasiri, Antonio Tricoli, in Industrial Applications of Nanomaterials, 2019 4.3 2D nanomaterialsĢD materials are an emerging class of nanostructured low-dimensional materials with a great potential in fabricating the next generation of miniaturized electronics and optoelectronics devices. The MoS 2/h-BN/GaAs heterostructure modified by chemical doping and electrical gating showed a power conversion efficiency (PCE) of 9.03%, and introducing BNNSs as electron-blocking/hole-transporting layers between graphene/Si increased its open-circuit voltage and its maximum PCE reached 10.93%. Solar cells based on heterostructured 2D materials have been reported very recently. In the past, many 2D materials have been claimed to be potential alternatives to Si in solar cells because of their compatibility in devices of sizes smaller than micron sizes.
Furthermore, heterostructures composed of graphene and BNNSs or graphene and TMDCs can be used as field-effect tunneling transistors. Multilayer heterostructures composed of graphene and BNNSs have been reported. The BNNS-protected graphene devices do not deteriorate under air. The BNNSs not only serves as the substrate for graphene but also as its protective cover. Removal of the sacrificial film produces heterostructured graphene/BNNS films, which exhibit an ultra-high mobility of ~10 6 cm 2/V s. The graphene layer is first deposited on a sacrificial film and then places onto the BNNS. has prepared graphene devices on BNNSs by direct mechanical assembly. One example of a 2D heterostructure is graphene deposited on BNNSs. Reproduced from Geim, A.K., et al., 2013. Schematic diagram of a hetero-structured 2D material.